Charge Amplification of a Graphene-integrated-CMOS (GIC) RF Detector

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A novel approach is demonstrated to characterize the charge amplification of mono-layered graphene as an integral part of a Complementary Metal Oxide Semiconductor Device (CMOS) under RF radiation. We have verified that charge carriers generated on the surface of a graphene structure can be measured indirectly through capacitive coupling between surfaces. With these findings, our aim is to develop a state-of-the-art graphene integrated CMOS RF detector that will excel in space and defense applications.

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Journal: TechConnect Briefs
Volume: 1, Nanotechnology 2014: Graphene, CNTs, Particles, Films & Composites
Published: June 15, 2014
Pages: 57 - 60
Industry sector: Advanced Materials & Manufacturing
Topicss: Carbon Nano Structures & Devices, Graphene & 2D-Materials
ISBN: 978-1-4822-5826-4