Kim H-G, Kim J-S, Kim Y.K., Yoon K-S, Kim H-G, Kim J-S, Kim Y.K., Kim H-G, Kim J-S, Kim Y.K., Won T.
Inha University, KR
Keywords: atomistic modeling, boron, strained-silicon, stresses
We report our KMC study on the effect of strain on B diffusion in silicon and relaxed SiGe layer by assuming a virtual strained structure with charged defect energy and diffusivity. The simulation results imply that boron diffusion is drastically retarded in a strained Si and relaxed SiGe when compared to a case with unstrained silicon. We also derived the distribution of physical stress along the heterojunction interface with varying the Ge implant for giving rise to a strain to the pure silicon.
Journal: TechConnect Briefs
Volume: 1, Technical Proceedings of the 2007 NSTI Nanotechnology Conference and Trade Show, Volume 1
Published: May 20, 2007
Pages: 328 - 331
Industry sector: Advanced Materials & Manufacturing
Topic: Advanced Materials for Engineering Applications
ISBN: 1-4200-6182-8