Liu Y., He J., Chan M.
Peking University Shenzhen SOC Key Laboratory, CN
Keywords: analytic model, band to band tunneling (BTBT), gate-all-around (GAA), nanowire tunnel-FETs (NW-TFETs)
In this paper, an analytic potential based current model of the gate-all-around (GAA) silicon nanowire tunnel-FETs (NW-TFETs) is proposed based on the surface potential solutions at the channel direction and considering band to band tunneling (BTBT) efficiency. The 3-D Poisson’s equation is solved to obtain the surface potential distribution in the partition regions along the channel direction for NW-TFET device and then a tunneling current model using Kane’s expression is developed. The validity of the developed model is proved by the good agreement between the model predictions and TCAD simulation results.
Journal: TechConnect Briefs
Volume: 2, Nanotechnology 2014: MEMS, Fluidics, Bio Systems, Medical, Computational & Photonics
Published: June 15, 2014
Pages: 491 - 494
Industry sector: Sensors, MEMS, Electronics
Topic: WCM - Compact Modeling
ISBN: 978-1-4822-5827-1