Che Y., Zhang L., Zhou X., He J., Chan M.
Peking University, CN
Keywords: device physics, modeling, nanowire, non-classical MOSFETs, schottky barrier device, simulation
In this paper, an analytic model of the Silicon-based Nanowire Schottky-Barrier MOSFETs is developed based on the 2D solution of body potential together with the WKB tunneling theory. The proposed model predicts the electrical characteristics of the silicon-based nanowire Schottky barrier MOSFETs with different geometry and structure parameters and extensive comparisons with the 2-D numerical simulation show that the presented model is valid for all operation regions of such a device with a variety of geometry parameters and different work function configurations of the metal source (drain). Such a compact model may be useful for us to benchmark nanowire Schottky barrier MOSFET circuit performance and device structure optimization.
Journal: TechConnect Briefs
Volume: 3, Nanotechnology 2009: Biofuels, Renewable Energy, Coatings, Fluidics and Compact Modeling
Published: May 3, 2009
Pages: 371 - 374
Industry sector: Advanced Materials & Manufacturing
Topic: Informatics, Modeling & Simulation
ISBN: 978-1-4398-1784-1