Garetto D., Rideau D., Tavernier C., Leblebiciand Y., Schmid A., Jaouen H.
IBM corp., FR
Keywords: full-band model, Poisson-Schroedinger model, TCAD modeling
As the conventional scaling down of MOSFET dimensions faces physical and economical limits, the performances of novel solutions such as high-K dielectrics, mechanical strain and substrate orientation or alternative device structures, such as fully-depleted SOI devices, must be evaluated within the perspective of an industrial integration. The effects of these technological boosters on channel mobility and gate leakage must be clearly quantified. A successful modeling approach should combine conventional TCAD simulation tools with physically-based models. A series of state-of-the-art physically-based models featuring band structure effects, advanced tunneling models, and mobility calculation has been implemented into a 1D Poisson-Schroedinger solver (UTOXPP) together with a Qt-based graphical user interface. The effects of the full-band k.p structure of Si-Ge-C material alloys, heterostructure and strain on the electrostatics and quantum transport can be investigated with such a model. A multiphonon non-radiative trapping model is used for studying the effects of interface and oxide defects on device reliability and trap assisted tunneling on nanoscale and memory devices.
Journal: TechConnect Briefs
Volume: 2, Nanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational
Published: June 13, 2011
Pages: 607 - 610
Industry sector: Advanced Materials & Manufacturing
Topic: Informatics, Modeling & Simulation
ISBN: 978-1-4398-7139-3