A Novel Approach of Sample Preparation for SCM Inspection in the DRAM Device Structures

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This paper discusses the removal of the doped-polysilicon of a gate transistor by wet chemical etching containing the spacer oxide and nitride that remain. This technique significantly improves the image quality of 2-D doping profile of SCM that properly provides the results of the desired device structures for inline monitoring and failure analysis or for product characterization.

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Journal: TechConnect Briefs
Volume: 1, Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 1
Published: May 7, 2006
Pages: 753 - 755
Industry sector: Advanced Materials & Manufacturing
Topic: Materials Characterization & Imaging
ISBN: 0-9767985-6-5