Lue J.L., Liu H.W, Wu E., Pai B., Fan S., Wang T.
ProMOS Technologies Inc, TW
Keywords: 2-D doping, deep trench, DRAM, SCM
This paper discusses the removal of the doped-polysilicon of a gate transistor by wet chemical etching containing the spacer oxide and nitride that remain. This technique significantly improves the image quality of 2-D doping profile of SCM that properly provides the results of the desired device structures for inline monitoring and failure analysis or for product characterization.
Journal: TechConnect Briefs
Volume: 1, Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 1
Published: May 7, 2006
Pages: 753 - 755
Industry sector: Advanced Materials & Manufacturing
Topic: Materials Characterization & Imaging
ISBN: 0-9767985-6-5