A Model for Fully Depleted Double Gate SOI MOS Transistors Including Temperature Effects

Gharabagi R.
St. Louis University, US

Keywords: fully depleted double gate SOI MOS transistors, model, temperature effects

A model for a fully depleted double gate Silicon on Insulator (SOI) Metal Oxide Semiconductor (MOS) Transistors is presented. Small geometry effects such carrier velocity saturation, mobility degradation, and channel length modulation are included. Both l

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Journal: TechConnect Briefs
Volume: 1, Technical Proceedings of the 2001 International Conference on Modeling and Simulation of Microsystems
Published: March 19, 2001
Pages: 490 - 493
Industry sector: Sensors, MEMS, Electronics
Topic: Modeling & Simulation of Microsystems
ISBN: 0-9708275-0-4