Zhang J., He H., He J., Ye Y., He H., He J., Chan M.
Peking University, CN
Keywords: circuit simulation, compact model, high-frequency, non-quasi-static effect, SOI-MOSFET, transient effect
A non-quasi-static (NQS) transient model for SOI MOSFETs is presented based on charge based dc model which is extensively verified with various structure parameters. From the inversion charge and current-continuity equation, the partial differential equation on inversion charge is derived and solved using spline collection method. With the non-quasi-static inversion charge distribution, the terminal currents in rapid transient analysis are obtained and have good agreements with two-dimension numerical simulation. The variation of NQS effect coming from the unique silicon-on-insulator structure is also analyzed.
Journal: TechConnect Briefs
Volume: 2, Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational (Volume 2)
Published: June 18, 2012
Pages: 800 - 803
Industry sector: Sensors, MEMS, Electronics
Topic: Compact Modeling
ISBN: 978-1-4665-6275-2