variability – TechConnect Briefs

Suppression of Variability in Metal Source/Drain SOI MOSFET with Partial Buried Oxide and δ-doping

Patil G.C., Qureshi S., Indian Institute of Technology Kanpur, IN

Recently, metal source/drain (S/D) dopant-segregated Schottky barrier (DSSB) SOI MOSFET has attracted the attention of researchers due to its planar structure, CMOS compatibility and reduced S/D series resistance at thin SOI film. However, employing dopant-segregation [...]

PSP Model Equations Extension for Statistical Estimation of Leakage Current in Nanometer CMOS Technologies Considering Process Variations

D’Agostino C., Flatresse P., Beigne E., Belleville M., STMicroelectronics, FR

A novel analytical methodology is proposed for statistical leakage estimation of CMOS circuits considering statistical process variations. The goal of the proposed methodology is to obtain a time-efficient and accurate estimation of the PDF of [...]