tunneling – Page 2 – TechConnect Briefs

Convergence Issues in Ab-initio Transport Calculation through Oxide Barriers and Molecules

Fonseca L.R.C., Demkov A.A., Motorola, Inc., US

Ab-initio calculations of transport through nanometer scale structures, such as individual atoms or molecules and ultra-thin oxide barriers directly link atomic structure and chemistry, which are difficult to probe, to transport properties, which are easier [...]

An Energy Transport Gate Current Model Accounting for a Non-Maxwellian Energy Distribution

Gehring A., Grasser T., Kosina H., Selberherr S., Institute for Microelectronics, Vienna, AT

We report on a new formulation for the description of hot electron tunneling through dielectrics. It is based on an expression which accounts for the non-Maxwellian shape of the electron energy distribution function (EED) and [...]

Charge Islands Through Tunneling

Robinson D.C., NASA Glenn Research Center, US

It has been recently reported that the electrical charge in a semiconductive carbon nanotube is not evenly distributed, but rather it is divided into charge “islands” [1,2]. This paper links the aforementioned phenomenon to tunneling [...]

Simulation of Wigner Function Transport in Tunneling and Quantum Structures

Jacoboni C., Bertoni A., Bordone P., Giacobbi N., University of Modena, IT

The Wigner-function approach to quantum transport in mesoscopic electron devices is presented. The concept of Wigner paths allows the formulation of a Monte Carlo simulation which is quantum mechanically rigorous and yet very similar to [...]

Compact Modeling of Tunneling Breakdown in PN Junctions for Computer-Aided ESD Design (CAD for ESD)

Subramanian Y., Darling R.B., University of Washington, US

This paper presents compact, physically-based electrothermal models for direct as well as indirect bandgap tunneling processes in pn-junctions for use in network simulators (e.g. Saber or VHDL-A). The model for indirect tunneling has been validated [...]

Non-Parabolicity and Non-Maxwellian Effects on Gate Oxide Tunneling

Gehring A., Grasser T., Selberherr S., TU Vienna, AT

Simulation of gate oxide tunneling currents in subquartermicron devices requires correct modeling of the electron energy distribution function in the channel region. However, the common assumption of a heated Maxwellian distribution function leads to a [...]

Simulation of Wigner Function Transport in Tunneling and Quantum Structures

Jacoboni C., Bertoni A., Bordone P., Giacobbi N., University of Modena, IT

The Wigner-function approach to quantum transport in mesoscopic electron devices is presented. The concept of Wigner paths allows the formulation of a Monte Carlo simulation which is quantum mechanically rigorous and yet very similar to [...]

Nanotube Tunneling as a Consequence of Probable Discrete Trajectories

Robinson D., NASA Glenn Research Center, US

It has been recently reported that the electrical charge in a semiconductive carbon nanotube is not evenly distributed, but is divided into charge "islands [1,2]." A clear understanding of tunneling phenomena can be useful to [...]

An Approach to Quantum Correction in Monte Carlo Device Simulation

Winstead B., Tsuchiya H., Ravaioli U., University of Illinois at Urbana-Champaign, US

A particle-based approach coupled with quantum potential corrections is very attractive for practical simulation of nanoscale semiconductor devices. We present here a quantum correction approach derived from a simplification of the Wigner function transpo