Impact of Gate Oxide Thickness and Channel Thickness on DC Performance of Carbon Nanotube Tunnel FET
Bhosale K.S., Jawake A.V., Aher S.R., Borse H.S., Patil G.C., Patil S.R., Patil G.C., Patil S.R., JSPM’s Rajarshi Shahu College of Engineering, IN
The scaling down of conventional complementary metal–oxide–semiconductor technology is suffering from fundamental limitations. To overcome these problems, novel engineering solutions like improving the device architecture,introducing materials into the channel region with superior transport properties, and [...]