surface state – TechConnect Briefs

Simulation of Current Slump Removal in Field-Plate GaAs MESFETs

Nomoto A., Satoh Y., Horio K., Shibaura Institute of Technology, JP

Two-dimensional transient analysis of field-plate GaAs MESFETs is performed by considering surface states in the region from the gate toward the drain. Quasi-pulsed current-voltage curves are derived from the transient characteristics. It is shown that [...]

Simulation of Removal of Surface-State-Related Lag and Current Slump in GaAs FETs

Hafiz H., Kumeno M., Horio K., Shibaura Institute of Technology, JP

Two-dimensional transient analysis of field-plate GaAs MESFETs is performed in which surface states are considered. Quasi-pulsed current-voltage curves are derived from the transient characteristics. It is shown that drain lag and current slump due to [...]

Simulation of Field-Plate Effects on Surface-State-Related Lag and Current Slump in GaAs FETs

Tanaka T., Itagaki K., Nakajima A., Horio K., Shibaura Institute of Technology, JP

In this study, we carry out two-dimensional transient analysis of field-plate GaAs MESFETs by taking surface states into account. Quasi-pulsed current-voltage curves are derived from the transient characteristics. We show that drain lag and current [...]

Simulation of Surface and Buffer Trapping Effects on Gate Lag in AlGaN/GaN HEMTs

Horio K., Nakajima A., Fujii K., Shibaura Institute of Technology, JP

Two-dimensional simulation of turn-on characteristics of AlGaN/GaN HEMTs is performed in which both buffer traps and sur-face states are considered. It is studied how the so-called gate lag is affected by these factors. It is [...]

Simulation of Device-Structure Dependence of Surface-Related Kink Phenomena in GaAs FETs

Wakabayashi A., Kazami Y., Ozawa J., Mitani Y., Horio K., Shibaura Institute of Technology, JP

Effects of surface states on the kink phenomena in GaAs MESFETs are studied by two-dimensional simulation. It is shown that the kink could arise due to impact ionization of holes and the following hole trapping [...]

Two-Dimensional Simulation of Surface-State Effects on Breakdown Characteristics of Narrowly-Recessed-Gate GaAs MESFETs

Mitani Y., Wakabayashi A., Horio K., Shibaura Institute of Technology, JP

Effects of surface states on breakdown characteristics of narrowly-recessed-gate GaAs MESFETs are studied by two-dimensional simulation. Particularly, it is discussed how the characteristics depend on the surface-state densities and on the recess structure parameters. It [...]

Simulation of Recess-Structure Dependence of Gate-Lag Phenomena in GaAs MESFETs

Horio K., Mitani Y., Wakabayashi A., Shibaura Institute of Technology, JP

We have made two-dimensional simulation of turn-on characteristics of recessed-gate and buried-gate GaAs MESFETs, and studied how the gate-lag or the slow current transient (which may occur due to surface states) is affected by the [...]