A Fully Automated Method to Create Monte-Carlo MOSFET Model Libraries for Statistical Circuit Simulations
Wang J., Trombley H., Watts J., Randall M., Wachnik R., IBM Semiconductor Research and Development Center, US
As the MOSFET continues to shrink, device-to-device variations become increasingly important. Therefore, it is critical to develop accurate, Monte-Carlo (MC) models that capture various device variations to allow statistical circuit simulations. To model the global [...]