SOI devices – TechConnect Briefs

Threshold Voltage Shifts in Narrow-Width SOI Devices Due to Quantum Mechanical Size-Quantization Effects

Ahmed S.S., Vasileska D., Arizona State University, US

We investigate the role of quantum-mechanical size-quantization effects in narrow-width SOI devices. In these structures, carriers experience a two dimensional confinement in a square quantum well at the semiconductor-oxide interface. This results not only in [...]

Quantum Effects in SOI Devices

Ahmed S.S., Akis R., Vasileska D., Arizona State University, US

Quantum effects have been reported to play an important role in the operation of narrow width SOI devices, in which the carriers experience a two dimensional confinement in a square quantum well at the semiconductor-oxide [...]

Quantum Effects in SOI Devices

Ahmed S.S., Akis R., Vasileska D., Arizona State University, US

Quantum effects have been reported to play an important role in the operation of narrow width SOI devices, in which the carriers experience a two dimensional confinement in a square quantum well at the semiconductor-oxide [...]

Simulation and Validation of Bulk Micromachined 6H-SiC High-g Piezoresistive Accelerometer

Atwell A.R., Okojie R.S., Kornegay K.T., Roberson S., Beliveau A., Cornell University, US

Quantum effects have been reported to play an important role in the operation of narrow width SOI devices, in which the carriers experience a two dimensional confinement in a square quantum well at the semiconductor-oxide [...]

An Effective Potential Method for Including Quantum Effects Into the Simulation of Ultra-Short and Ultra-Narrow Channel MOSFETs

Akis R., Milicic S., Ferry D.K., Vasileska D., Arizone State University, US

Quantum effects are known to occur in the channel region of MOSFET devices, in which the carriers are confined in a triangular potential well at the semiconductor-oxide interface. Typically, these effects are quantified by a [...]

3D Thermo-Electro-Mechanical Simulations of Gas Sensors Based on SOI Membranes

Lu C-C., Setiadi D., Udrea F., Milne W.I., Covington J.A., Gardner J.W., Cambridge University, UK

3D thermo-electro-mechanical device simulations are presented of a novel fully CMOS-compatible MOSFET gas sensor operating in a SOI membrane. A comprehensive stress analysis of a Si-SiO2ñbased multilayer membrane has been performed to ensure a high [...]

Impact of Heat Source Localization on Conduction Cooling of Silicon-on-Insulator Devices

Sverdrup P.G., Ju Y.S., Goodson K.E., Stanford University, US

The temperature rise in compact silicon devices is strongly underestimated at present by simulations using conventional heat diffusion theory, which is based on the Fourier heat conduction law. This problem is particularly important for devices [...]