single electron transistor – TechConnect Briefs

Nanoelectronic SET-based core for Network-on-chip architectures

Pes B.S., Guimaraes J.G., da Costa J.C., University of Brasilia - UnB, BR

Nanoelectronics is a very promising step the world of electronics is taking. It is proved to be more efficient than the microelectronic approaches currently in use, mainly in terms of area and energy management. A [...]

Resist Mask Designs for Quantum Dot Transistor Using E-Beam Nanolithography

Hashim U., Sutikno S., Jamal Z.A.Z., Northern Malaysia University College of Engineering (KUKUM), MY

Quantum dot single electron transistor (QD SET) can be fabricated using e-beam nanolithography (EBL) and then continued by combination process of pattern dependent oxidation (PADOX) and high density plasma etching. EBL was used to pattern [...]

Coulomb Oscillations at Room-Temperature of Single-Walled Carbon Nanotube Field-Effect Transistors

Ohno Y., Asai Y., Maehashi K., Inoue K., Matsumoto K., Osaka University, JP

Single-walled carbon nanotube field-effect transistors with thin tunnel barriers were investigated, and room-temperature single-electron transistor (SET) operation was realized. Single-walled carbon nanotubes were grown by thermal chemical vapor deposition at 820 degrees Celsius for 10 [...]

Reproducibility of Silicon Single Electron Quantum Dot Transistor

Hasim U., Sutikno S., Nothern Malaysia University College of Engineering, MY

In principle, based on the form of tunnel junction, single electron transistor (SET) can be classified into four types, i.e. nanowire SET, quantum dot SET, nanotube SET and point contact SET. Another classification is SET [...]

Development of a silicon-based quantum cellular automata cell

Mitic M., Cassidy M.C., Petersson K.D., Gauja E., Starrett R.P., Brenner R., Yang C., Jamieson D.N., Clark R.G., Dzurak A.S., University of New South Wales, AU

Quantum-dot cellular automata (QCA) [1] represent a potential paradigm shift in computation, offering elegant solutions to the critical problems of device density, interconnection and power dissipation. To date QCA cells have been experimentally demonstrated in [...]

An Improved Single-Electron-Transistor Model for SPICE Application

Wu Y-L, Lin S-T, National Chi-Nan University, TW

Single electron transistors (SETs) have drawn much attention of researchers and scientists because they are considered candidate as one of the elements for future low power, high-density memories and logic circuits. Instead of using Monte [...]

Novel Random Number Generators Based on Si Nanodevices for Mobile Communication Security Systems

Fujita S., Uchida K., Yasuda S., Ohba R., Tanamoto T., Toshiba Corp, JP

We propose a new application of silicon (Si) nanodevices that can generate high-quality random numbers (HQ-RNs) for mobile communication security systems, one of most important elements of information technology (IT). We have successfully demonstrated the [...]