simulation – Page 5 – TechConnect Briefs

Comprehensive Examination of Intrinsic-Parameter-Induced Characteristic Fluctuations in 16-nm-Gate CMOS Devices

Han M-H, Li Y., National Chiao Tung University, TW

In this work, the intrinsic device parameter variability including the metal gate workfunction fluctuation (WKF), the process variation effect (PVE), and the random dopant fluctuation (RDF) in 16-nm-gate n-type MOSFETs (NMOS) and p-type MOSFETs (PMOS) [...]

An SOA Aware MOSFET Model for Highly Integrated, Analog Mixed-Signal Design Environments

Hall J., Luo Z., Xiao Y., Young A., Connerney D., Fairchild Semiconductor, US

Circuit simulations involving power devices often require additional checks comparing with generic low power applications. The burden lies with the individual designers to ensure that the power transistors are operating well within the Safe Operating [...]

A simulation of microfluidic oscillator micromixer

Khelfaoui R., University of Bechar, DZ

Micromixing is particularly interesting for many microfluidic applications. In micrometric size devices, reaching an efficient mixing is often difficult, due to laminarization of the flow. As an example, efficient mixing may be obtained using a [...]

An Analytic Model of the Silicon-Based Nanowire Schottky Barrier MOSFET

Che Y., Zhang L., Zhou X., He J., Chan M., Peking University, CN

In this paper, an analytic model of the Silicon-based Nanowire Schottky-Barrier MOSFETs is developed based on the 2D solution of body potential together with the WKB tunneling theory. The proposed model predicts the electrical characteristics [...]

Generic Compact Model Development of Double-Gate MOSFETs with Inclusion of Different Operation Modes and Channels from Heavily Doped to Intrinsic Case

Zhou X., Zhang J., Zhang L., Zhang J., Zhang L., Ma C., He J., Chan M., Peking University, CN

In this paper, the Double-Gate MOSFET’s operation modes such as symmetric, asymmetric and independent-gate-operation are discussed and an idea for the generic compact model development is proposed. It is shown that the presented generic model [...]

Analog Nanoelectronic Computation: I. Simulation of Dynamical Systems

Schmieder R.W., NanoLogic, Inc., US

We describe here a new paradigm for computation and computer design that has the potential for performance many orders of magnitude higher than conventional digital computers, especially for large-scale simulation of complex systems. The paradigm [...]

The Concatenation of the Concurrent Self-replication and Self-organization Processes

Wegrzyn S., Znamirowski L., Silesian University of Technology, PL

In the paper the concatenation of the concurrently running two self-replication processes and concurrently running self-replication and self-organization processes has been analyzed and discussed. Basing on the simulation, there was possible to predict the behavior [...]

Keywords: simulation