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Keywords: simulation

A Space-time Coarse-grained Model for Particle Simulations of Soft Matter

Liew C.C., Mikami M., Research Institute for Computational Sciences (RICS), AIST, JP
We have developed a series of particle models that are consistent in phase behavior at various space-time coarse-grained levels based on three coarse-graining procedures: Grouping (Gp) for monomer or segment of molecules, Packing (Pk) for [...]

A Systematic Approach to Macromodeling Complex MEMS Devices

Casinovi G., Georgia Tech, US
This paper describes a modeling methodology for arbitrary MEMS devices based on the concept of element stamps. Previously published work has shown that element stamps can be used profitably to build models of MEMS devices [...]

Design Optimization of Micromachined High Aspect Ratio 3D On-Chip Solenoid Inductor

Chomnawang N., Lu H., Colinjivadi K., Lee J., University of Texas at Dallas, US
We report the simulation work done by using Sonnet EMÔ on high aspect ratio (1:4 and 1:8) 3D on-chip air-core solenoid inductors. Simulations on 2, 3, and 5-turn inductors with 200 and 400 mm high [...]

Accurate Modeling for RF Silicon MOSFET up to 15 GHz and the Parameter Extraction Methodology

Lin J., Kiat Seng Y., Jian Guo M., Manh Anh D., Nanyang Technological University, SG
The accurate method to extract a small-signal subcircuit model of MOSFET’s based on BSIM4 is presented, a novel approach to determining the parasitic inductances by Z-parameters, the intrinsic terminal resistance and capacitance by Y-parameters are [...]

An Interactive Website as a Tool for CAD of Power Circuits

Swiercz B., Starzak L., Zubert M., Napieralski A., Technical University of Lodz, PL
The rapid development of microelectronics results in more complex semiconductor device structures and makes it necessary to use modern computer software. However, high prices and hardware requirements considerably limit the access to these CAD tools [...]

Theoretical Analysis of Donor – Spacer – Acceptor Structure Molecule for Stable Molecular Rectifier

Mizuseki H., Niimura K., Majumder C., Belosludov R.V., Farajia A.A., Kawazoe Y., Institute for Materials Research, Tohoku University, JP
Recently, the field of molecular electronics has attracted strong attention as a post-silicon technology to enable future nanoscale electronic devices. The realization of a molecular device with a unimolecular rectifying function is one of the [...]

An Organic Molecule – Fullerene Mixture for a High Efficiency Photovoltaic Device: Theoretical Study

Mizuseki H., Niimura K., Majumder C., Kawazoe Y., Tohoku University, JP
The current general trend in research and development of photovoltaic elements is aimed at producing lower cost devices. An encouraging breakthrough in the development of highly efficient materials has been achieved by mixing electron-donor type [...]

An Energy Transport Gate Current Model Accounting for a Non-Maxwellian Energy Distribution

Gehring A., Grasser T., Kosina H., Selberherr S., Institute for Microelectronics, Vienna, AT
We report on a new formulation for the description of hot electron tunneling through dielectrics. It is based on an expression which accounts for the non-Maxwellian shape of the electron energy distribution function (EED) and [...]

Modelling and Simulation of Mechanical, Thermal and Electrical Behaviour of Si Cantilever with Implanted Strain Gauge

Husak M., Jakovenko J., Kulha P., Vborn Z., Czech Technical University in Prague, CZ
The paper describes methodology of design of cantilever with implanted layers in Si monocrystal. In the paper there is characterized physical model of implanted strain gauges, various girder topologies are designed and basic technological steps [...]

Simulation of a Diamond-Based Bistable Thermal Microswitch

Schmid P., Hernandez-Guillen F.J., Kohn E., University of Ulm, DE
A novel bistable layout for a thermally driven microswitch based on polycrystalline diamond has been developed and evaluated by simulations. The device is based on a double-anchored, free standing diamond beam, which buckles due to [...]

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