short-/narrow-channel effects – TechConnect Briefs

Unified Length-/Width-Dependent Drain Current Model for Deep-Submicron MOSFETs

Chiah S.B., Zhou X., Lim K.Y., Nanyang Technological University, SG

The motivation of this work is to develop a unified geometry-dependent drain current (Ids) model for the entire range of drawn length (L) and drawn width (W) without binning, considering all important short-/narrow-channel effects including [...]

Unified Length-/Width-Dependent Threshold Voltage Model with Reverse Short-Channel and Inverse Narrow-Width Effects

Chiah S.B., Zhou X., Lim K.Y., Nanyang Technological University, SG

The objective of this work is to develop a unified geometry-dependent scalable threshold voltage (Vt) model for the entire range of drawn length (L) and drawn width (W) without binning, including reverse short-channel effect (RSCE) [...]