Compact Model for Ultra-Short Channel Four-Terminal DG MOSFETs for Exploring Circuit Characteristics
Nakagawa T., Sekigawa T., Tsutsumi T., Hioki M., Suzuki E., Koike H., National Institute of Advanced Industrial Science and Technology (AIST), JP
We have proposed a compact model of the DG MOSFETs which handles two gates independently. The model can simulate the DG MOSFETs of asymmetric gate design, together with their four-terminal operation. In this report, we [...]