Scaled Si-MOSFETs – TechConnect Briefs

An Overview of the 3D Simulation Efforts at Arizona State University Directed Towards Understanding Transport in the Quantum Dots and the Ultra-Small Devices of the Future

Akis R., Vasileska D., Ferry D.K., Arizona State University, US

A brief summary of some of the simulation efforts within the Nanostructure Research Group at Arizona State University is presented, with emphasis on the tools used for modeling deep-submicrometer devices and quantum dot structures under [...]

The Influence of Space Quantization Effect on the Threshold Voltage, Inversion Layer and Total Gate Capacitance in Scaled Si-MOSFETs

Vasileska D., Ferry D.K., Arizona State University, US

We investigate the influence of poly-gate depletion on the inversion layer capacitance CinV, total gate capacitance CtOt and threshold voltage VT in scaled Si MOSFETs using both semiclassical (SC) and quantum-mechanical (QM) description of the [...]