random dopant fluctuation – TechConnect Briefs

Simulation Study on Dopant Fluctuation Impact on SRG MOSFET Device and Circuit Performane

Wang H., He J., Liu Y., Peking University Shenzhen SOC Key Laboratory, CN

This paper investigates the impact of random dopant fluctuation on surrounding gate MOSFET, from atomic statistical simulation of device to circuit performance evaluation. The doping profile is generated by an analysis of each lattice atom [...]

Numerical study on effect of random dopant fluctuation on double gate MOSFET based 6-T SRAM performance

Zhang X., Peking University, CN

The random dopant fluctuation (RDF) of double gate (DG) MOSFET based 6-T SRAM is investigated with three-dimensional (3-D) statistical simulation. The doping profile is generated by matlab and the threshold voltage variation due to RDF [...]

Process- and Random-Dopant-Induced Characteristic Variability of SRAM with nano-CMOS and Bulk FinFET Devices

Li T-Y, Li Y., Hwang C-H, Li T-Y, Li Y., National Chiao Tung University, TW

The magnitude of the intrinsic parameter fluctuations, such as process-variation and random dopant fluctuation, steadily increase with the reduction of device dimensions, and lead to pronounced component mismatch in area constrained circuits such as static [...]

Random Dopant Induced Fluctuations of Characteristics in Deep Sub-micron MOSFETs

Chou H-M, Lo S-C, Tsai J-H, Li Y., NCHC, TW

As the gate length of MOSFET devices shrinks down below 100 nm, the fluctuation of major devices parameter, namely, threshold voltage (VTH), subthreshold swing, drain current (ID) and subthreshold leakage current duo to influences of [...]