Analytical Models for Quantized Sub-Band Energy Levels and Inversion Charge Centroid of MOS Structures Derived from Asymptotic and WKB Approximations
Quantum effects on MOS structures investigation.
Keywords: quantum effect
Implications of Gate Tunneling and Quantum Effects in the Gate-Channel Stack
Simulation and modeling of gate tunneling current for thin-oxide MOSFETs and Double-Gate SOIs are discussed. Guidelines for design of leady MOS capacitors are proposed. Resonant gate tunneling current in DG SOI is simulated, based on [...]
Low Field Electron Mobility in Ultra-Thin Strained-Si Directly on Insulator MOSFET in Sub-0.1µm Regime
A 200 word (or less) text only summThe fabrication of Fully-Depleted strained-Si directly on insulator (SSOI) MOSFET was recently demonstrated. The combination of strain-induced transport property with the scaling advantage of ultra-thin body devices is [...]
Implications of Gate Tunneling and Quantum Effects in the Gate-Channel Stack
Simulation and modeling of gate tunneling current for thin-oxide MOSFETs and Double-Gate SOIs are discussed. Guidelines for design of leady MOS capacitors are proposed. Resonant gate tunneling current in DG SOI is simulated, based on [...]