quantum confinement – TechConnect Briefs

Analytical model of quantum threshold voltage in short-channel nanowire MOSFET including band structure effects

Dura J., Martinie S., Munteanu D., Jaud M-A, Barraud S., Autran J-L, CEA/LETI/MINATEC, FR

The particular shape of Gate-All-Around (GAA) nanowires allows a much higher electrostatic control of the active region than conventional devices, as required for the integration at the end-of-roadmap. This architecture is suitable for ultra-scaled devices [...]

Detailed Analysis of Quantum-Effects in Nanowire Tunneling Transistors with Different Channel-Profiles

Heigl A., Wachutka G., TU Munich, DE

Combining the operational principle of the tunneling field effect transistor with the idea of a multigate channel control appears as an attractive option to avoid unwanted shortchannel effects in nanometer-scale MOS-devices. This motivated us to [...]

Compact Model of the Ballistic Subthreshold Current in Independent Double-Gate MOSFETs

Munteanu D., Moreau M., Autran J-L, L2MP-CNRS, FR

Double-Gate structures with independent gates have been recently proposed, allowing a four terminal operation. Independent Double-Gate (IDG) MOSFETs offer additional potentialities, such as a dynamic threshold voltage control by one of the two gates, transconductance [...]

Modeling and Simulation of Single-Electron Multi Tunnel Junction Memory

Le Carval G., Le Royer C., Le Carval G., Le Royer C., Sanquer M., Fraboulet D., CEA-LET, FR

For optimization of Quantum-Dot-based Multi Tunnel Junction Memory (MTJM) [1], we propose an original compact model validated by physical simulations. We analyze the impact of physical and technological parameters (Temperature, dots density, geometries…) on writing [...]

Modeling and Simulation of Single-Electron Multi Tunnel Junction Memory

Le Carval G., Le Royer C., Le Carval G., Le Royer C., Sanquer M., Fraboulet D., CEA-LET, FR

For optimization of Quantum-Dot-based Multi Tunnel Junction Memory (MTJM) [1], we propose an original compact model validated by physical simulations. We analyze the impact of physical and technological parameters (Temperature, dots density, geometries…) on writing [...]