paired-linear traps – TechConnect Briefs

Interface Traps in Surface-Potential-Based MOSFET Models

Chen Z., Zhou X., See G.H., Zhu G., Zhu Z., Zhu G., Zhu Z., Nanyang Technological University, SG

Surface or interface properties along the surface channel region have great influences on the MOSFET characteristics. The interface-trap density increases during the repeated program-erase cycling of non-volatile floating-gate and SONOS memory transistors. Thus, the compact [...]