non-charge-sheet – TechConnect Briefs

Non-Charge-Sheet Analytic Model for Ideal Retrograde Doping MOSFETs

Zhou X., Zhou Z., Zhang J., Zhou X., Zhou Z., Lin X., He J., Peking University, CN

This paper presents a physics-based non-charge-sheet analytic model for an ideal retrograde doping MOSFET structure. The model adopts an approach of solving Poisson’s equation for the heavily-doped region and lightly-doped region, respectively, and the analytic [...]

A Carrier Based Analytic Model for Undoped Surrounding-Gate MOSFETs

He J., Zhang X., Chan M., Wang Y., Peking University, CN

A carrier-based analytic DCIV model for the undoped cylindrical surrounding-gate MOSFETs is presented in this paper. It is based on an exact solution of the Poisson equation and a Pao-Sah current formulation in terms of [...]