nanoscale MOSFET – TechConnect Briefs

Comprehensive Examination of Intrinsic-Parameter-Induced Characteristic Fluctuations in 16-nm-Gate CMOS Devices

Han M-H, Li Y., National Chiao Tung University, TW

In this work, the intrinsic device parameter variability including the metal gate workfunction fluctuation (WKF), the process variation effect (PVE), and the random dopant fluctuation (RDF) in 16-nm-gate n-type MOSFETs (NMOS) and p-type MOSFETs (PMOS) [...]

Compact Quantum Modeling Framework for Nanoscale Double-Gate MOSFET

Monga U., Fjeldly T.A., Norwegian University of Science and Technology, NO

A quantum mechanical modeling framework for ultra-thin body double-gate MOSFETs operating in subthreshold and near-threshold regime is presented. For subthreshold conditions, we have assumed that the electrostatics is dominated by capacitive coupling between the body [...]