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Keywords: model

A turn‐on DC surface‐potential‐based drain current model for fully‐depleted poly‐Si thin film transistors

Zhu Z., Chu J., Suzhou Vocational University, CN
A turn‐on DC surface‐potential‐based drain current model for fully‐depleted polycrystalline silicon thin film transistors is developed based on the charge sheet model considering both deep and tail acceptor trap states in the grain boundary and [...]

MTS Model Theory in Small Volume Electronic Materials

Saptono R., Kim C-U., Universitas Indonesia, ID
Efforts have been made to study and model the temperature-dependence of flow stress. Mechanical Threshold Stress (MTS) model is one of the most admired physical mechanistic models. The model was developed on the basis of [...]

Predicting Contact Angles for Regular and Irregular Surfaces

Krishnan K., Loth E., University of Virginia, US
We attempted new models for advancing and receding contact angles for both regular and irregular surfaces. While many models have been suggested for regular surfaces, comparison with experimental data shows the presence of secondary effect. [...]

Multimedia Environmental Distribution of Nanomaterials

Liu H.H., Cohen Y., University of California, Los Angeles, US
In the present study, a generalized model of the multimedia environmental distribution of engineered nanomaterial is developed via multimedia fate and transport modeling to estimate potential exposure levels in various environmental compartments. In this model, [...]

Modeling of High Voltage Devices for ESD Event Simulation

Zhou Y., Salcedo J., Hajjar J.-J., Analog Devices, Inc., US
BCDMOS process technologies are key in enabling highly integrated mixed-signal application for the automotive, medical and industrial sectors. Achieving satisfactory ESD performance in high voltage mixed-signal applications requires synthesized co-design using circuit-level ESD event simulation [...]

Modeling Aggregation and Size Distribution of Nanoparticles with Monte Carlo Simulation

Liu H., Surawanvijit S., Rallo R., Orkoulas G., Cohen Y., University of California, Los Angeles, US
The size distribution of the nanoparticles and their aggregates is crucial for predictions of the fate and transport of nanoparticles in the environment. A computational model was developed in the present work based on a [...]

Electrochemical Mechanics of Nanometer-Scaled Structural Layers of Bacterial Spores

Kazakov S.V., Pace University, US
The early events in the nutrient and non-nutrient germination of Bacillus subtilis spores are considered in combination with the properties of nanometer-scaled spore structural layers. All structural, not metabolically mediated, transformations at the early steps [...]

A Physical Based Hot Carrier Injection Compact Model for Nanoscale FinFET

Ma C., Li B., Lin X., Zhang L., Zhang X., He J., Zhang L., Zhang X., Lin X., Peking University, CN
A detail analysis for nanoscale FinFET performance degradation induced by the Hot Carrier Injection (HCI) is given in this paper, and a physical based HCI compact model adapted to all the operation modes is presented. [...]

Closed Form Current and Conductance Model for Symmetric Double-Gate MOSFETs using Field-dependent Mobility and Body Doping

Hariharan V., Thakker R., Patil M.B., Vasi J., Rao V.R., IIT Bombay, IN
In this paper we present a completely closed-form inversion charge-based model for the drain current and conductance of a symmetric double-gate MOSFET based on the drift-diffusion transport mechanism, that takes into account vertical field mobility [...]

An Accurate and Versatile ED- and LD-MOS Model for High-Voltage CMOS IC Spice Simulation

Tudor B., Wang J.W., Hu B.P., Liu W., Lee F., Synopsys, Inc., US
The paper presents a high-voltage compact MOSFET model that has been proven physically accurate and numerically robust for various and generations of high-voltage ED (extended drain) and LD (laterally double diffused) production CMOS process technologies. [...]

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