high-frequency – TechConnect Briefs

Modeling of novel concept design for extremely small UHF band transmit/receive element based on multiferroics

Carka D., Sepulveda A., Keller S., Carman G.P., New York Institute of Technology, US

Multiferroic heterostructures consisting of a piezoelectric or ferroelectric material and a ferromagnetic material with magnetostrictive properties allow for cross coupling of the electric and magnetic degrees of freedom via strain mediation of the magnetoelectric coupling. [...]

A Charge Based Non-Quasi-Static Transient Model for SOI MOSFETs

Zhang J., He H., He J., Ye Y., He H., He J., Chan M., Peking University, CN

A non-quasi-static (NQS) transient model for SOI MOSFETs is presented based on charge based dc model which is extensively verified with various structure parameters. From the inversion charge and current-continuity equation, the partial differential equation [...]

Critical review of CNTFET compact models

Claus M., Haferlach M., Gross D., Technische Universität Dresden, DE

The very recent progress in manufacturing carbon nanotube transistors (CNTFETs) makes these transistors attractive for analog HF circuit applications for which adequate compact models accurately describing the transistor behavior are needed. So far, most models [...]

Design study of CNT transistors layouts for high frequency analog circuits

Claus M., Technische Universität Dresden, DE

CNTFET technology is examined for high speed analog circuits. Design guidelines are deduced based on a realistic extrinsic circuit model. Moreover, numerical device simulations are used to derive specifications for CNTFET compact models suitable for [...]

High-Frequency Characteristic Optimization of Heterojunction Bipolar Transistors

Li Y., Hwang C-H, Chen Y-C, National Chiao Tung University, TW

In this paper, an optimization technique (so-called the geometric programming) is employed to optimize the base doping and Ge-dose for SiGe HBTs with high cut-off frequency and base-collector current gain. This work first formulates Kroemer’s [...]

High Frequency Characteristics of Nanoscale Silicon Nanowire FET

Li Y., Hwang C-H, National Chaio Tung University, TW

Nanoscale multigate field effect transistors (FETs) are potentially next-generation device candidates for achieving the high performance targets of the ITRS due to their superior reduction of the short channel effects and excellent compatibility with planar [...]

Compact Modeling and Circuit Impact of a Novel Frequency Dependence of Capacitance in RF MOSFETs

Sudhama C., Joardar K., Whitfield J., Zlotnicka A., Motorola SPS, US

The exploration and modeling of high-frequency MOSFET phenomena are vitally important because MOSFETs are emerging as candidates for active devices in front-end RF circuits operating at more than 1GHz [1-2]. In this work we present [...]