HEMT – Page 2 – TechConnect Briefs

Simulation of Surface and Buffer Trapping Effects on Gate Lag in AlGaN/GaN HEMTs

Horio K., Nakajima A., Fujii K., Shibaura Institute of Technology, JP

Two-dimensional simulation of turn-on characteristics of AlGaN/GaN HEMTs is performed in which both buffer traps and sur-face states are considered. It is studied how the so-called gate lag is affected by these factors. It is [...]

Effects of Disorder in Reduced Dimensional and Quantum Electronics

Weaver B.D., Aifer E.H., Naval Research Laboratory, US

We discuss the effect of atomic disorder on electronic systems that operate in either reduced dimension or by quantum-mechanical transport. Systems include high electron mobility transistors, tunnel diodes, superconductors, multiquantum well infrared and ultraviolet detectors, [...]

HEMT Optimization by Advanced RSM Models

Profirescu M.D., Dima G., Govoreanu B., Mitrea O., University Politehnica of Bucharest, RO

In this paper, the optimization of heterostructure devices using the Design of Experiments concept and advanced Response Surface Models is presented. As an example, the structural optimization of a pseudomorphic Al0.2Ga0.8As/In0.2Ga0.8As/GaAs pulse doped HEMT is [...]