GIDL – TechConnect Briefs

GIDL Current and Pass-Gate Body Potential Modeling in 22nm HKMG PD-SOI CMOS

Luo L., Walko J.P., Johnson J.M., Springer S., IBM, US

In a floating PD (partially depleted) SOI (silicon-on-insulator) transistor, the internal DC body potential is determined by the various body current components, mainly including diode current, gate-to-body oxide tunneling current (Igb), impact ionization current (II) [...]

Impact of Gate Induced Drain Leakage and Impact Ionization Currents on Hysteresis Modeling of PD SOI Circuits

Chen Q., Suryagandh S., Goo J-S, An J.X., Thuruthiyil C., Icel A.B., Advanced Micro Devices, US

The impact of the gate induced drain leakage and impact ionization currents on hysteresis of PD FB SOI circuits is examined, and a physical understanding is provided. Measured silicon data from 90nm and 65nm PD [...]