electron states – TechConnect Briefs

INGAAS/GAAS Quantum Dot With Material Mixing

Filikhin I., Suslov V.M., Vlahovic B., North Carolina Central University, US

We model an InGaAs/GaAs quantum dot having dependence of the Ga fraction along vertical axis. The effect of material mixing on the electron energy spectra is considered. This theoretical model is based on a single [...]

Numerical Modelling of Experimentally Fabricated Inas/Gaas Quantum Rings

Filikhin I., Deyneka E., Vlahovic B., North Carolina Central University, US

In the presented work we apply a single subband model for InAs/GaAs QD(QR), where the electron effective mass depends on the confinement energy by the Kane formula. The geometrical parameters of the model are based [...]

Modeling of Nanoelectronic and Quantum Devices

Ferry D.K., Akis R., Gilbert M.J., Speyer G., Arizona State University, US

The semiconductor industry is constantly pushing towards ever smaller devices and it is expected that we will see commercial devices with gate lengths less than 10 nm within the next decade. Such small devices have [...]