effective potential – TechConnect Briefs

Threshold Voltage Shifts in Narrow-Width SOI Devices Due to Quantum Mechanical Size-Quantization Effects

Ahmed S.S., Vasileska D., Arizona State University, US

We investigate the role of quantum-mechanical size-quantization effects in narrow-width SOI devices. In these structures, carriers experience a two dimensional confinement in a square quantum well at the semiconductor-oxide interface. This results not only in [...]

Quantum Effects in SOI Devices

Ahmed S.S., Akis R., Vasileska D., Arizona State University, US

Quantum effects have been reported to play an important role in the operation of narrow width SOI devices, in which the carriers experience a two dimensional confinement in a square quantum well at the semiconductor-oxide [...]

The Use of Quantum Potentials for Confinement in Semiconductor Devices

Asenov A., Brown A.R., Watling J.R., Glasgow University, UK

As MOSFETs are scaled into sub 100 nm (decanano) dimensions, quantum mechanical confinement and tunnelling start to dramatically affect their characteristics. In this paper we describe the introduction of quantum corrections within a 3D drift [...]

Quantum Effects in SOI Devices

Ahmed S.S., Akis R., Vasileska D., Arizona State University, US

Quantum effects have been reported to play an important role in the operation of narrow width SOI devices, in which the carriers experience a two dimensional confinement in a square quantum well at the semiconductor-oxide [...]

The Use of Quantum Potentials for Confinement in Semiconductor Devices

Asenov A., Brown A.R., Watling J.R., Glasgow University, UK

As MOSFETs are scaled into sub 100 nm (decanano) dimensions, quantum mechanical confinement and tunnelling start to dramatically affect their characteristics. In this paper we describe the introduction of quantum corrections within a 3D drift [...]

Simulation and Validation of Bulk Micromachined 6H-SiC High-g Piezoresistive Accelerometer

Atwell A.R., Okojie R.S., Kornegay K.T., Roberson S., Beliveau A., Cornell University, US

Quantum effects have been reported to play an important role in the operation of narrow width SOI devices, in which the carriers experience a two dimensional confinement in a square quantum well at the semiconductor-oxide [...]

The Use of Bohm Trajectories and the Effective Potential in Probing Quantum Mechanical Behavior in 2-D and Spintronic Sub-micron Devices

Shifren L., Akis R., Ferry D.K., Arizona State University, US

We utilize an effective potential to reproduce Bohm (quantum) trajectory behavior using purely classical trajectories. The effective potential is a novel method for including certain quantum phenomena into classical simulations by projecting the non-zero dimensions [...]