dynamic depletion – TechConnect Briefs

A Simplified Model for Dynamic Depletion in Doped UTB-SOI/DG-FinFETs

Zhou X., Chiah S.B., Nanyang Technological University, SG

Compact modeling for doped-body MOSFETs, such as ultra-thin body (UTB) SOI and double-gate (DG) FinFETs, represents the most challenging task since it involves the Poisson’s solution with two boundary conditions, which is not available when [...]

HiSIM-SOI: SOI-MOSFET Model for Circuit Simulation Valid also for Device Optimization

Sadachika N., Kusu S., Ishimura K., Murakami T., Kajiwara T., Hayashi T., Nishikawa Y., Yoshida T., Miura-Mattausch M., Hiroshima University, JP

SOI-MOSFETs are considered to be suitable for high performance as well as low power applications and its developments are tend to go toward the thinner SOI films to enhance the device characteristics. Thus compact models [...]