dopant – TechConnect Briefs

Novel Post Treatment of Nano-Particle Reinforced Metallic Coatings

Tay S.L., Goode C., Cirrus Materials Science, NZ

Electrochemical co-deposition of metallic coatings with a second phase material have been widely applied in industry to improve the properties of coatings. A variety of hard oxide, carbide, nitride, and ceramic nanoparticles have been successfully [...]

Atomic scale dopant detection in an individual silicon nanowire by atom probe tomography

Chen W-H, Lardé R., Cadel E., Xu T., Grandidier B., Nys J.P., Pareige P., Groupe de Physique des Matériaux, FR

The atom probe tomography is a three-dimensional high resolution analytical microscope that can map the distribution of atoms in semiconductor materials such as silicon nanowires.

Synthesis, Extraction and Surface Modification Of (Zn,Mn)Se Nanocrystals Using Microemulsions As Templates

Heckler T., Qiu Q., Wang J., Mei B., Mountziaris T.J., University of Massachusetts, US

This research focuses on the novel room temperature synthesis of (Zn,Mn)Se quantum dots that exhibit luminescence peaks at longer wavelengths than the ZnSe bulk emission, due to the Mn ions incorporated in the ZnSe lattice. [...]

Diffusion Mechanisms and Capture Radii in Silicon

Beardmore K., Windl W., Haley B.P., Gronbech-Jensen N., Motorola, US

We have calculated the capture radii for several defect pairs, consisting of dopants and point defects (interstitials I and vacancies V, in silicon. Interaction potentials for I-V, I-B, P-V, and As-V were calculated using the [...]

Diffusion Mechanisms and Capture Radii in Silicon

Beardmore K., Windl W., Haley B.P., Gronbech-Jensen N., Motorola, US

We have calculated the capture radii for several defect pairs, consisting of dopants and point defects (interstitials I and vacancies V, in silicon. Interaction potentials for I-V, I-B, P-V, and As-V were calculated using the [...]