compact device modeling – TechConnect Briefs

Single-walled Carbon Nanotube (CNT) Field Effect Transistor Device Modeling

We have developed a surface potential based compact model for a single well semiconductor CNT field effect transistor. Our compact modeling results for surface potential, channel charge, gate capacitance and channel current are compared with [...]

Improved Compact Model of Quantum Sub-band Energy Levels for MOSFET Device Application

Feldman W., Cumberbatch E., Abebe H., USC/ISI, US

Compact models for quantum mechanical behavior of transistors are becoming increasingly important as shrinking transistor sizes bring the oxide thickness to below four nanometers. An exponential approximation for the silicon potential is used to derive [...]

Electrostatic Potential Compact Model for Symmetric and Asymmetric Lightly Doped DG-MOSFET Devices

Abebe H., Cumberbatch E., Uno S., Tyree V., USC/ISI, US

The analytical symmetric and asymmetric lightly doped DG-MOSFET device electrostatic potential compact model presented here improves the compact model accuracy without any iteration. The model is developed using the Lambert Function and a 2-dimensional (2-D) [...]

Compact Models for Double Gate MOSFET with Quantum Mechanical Effects using Lambert Function

Abebe H., Morris H., Cumberbatch E., Tyree V., University of Southern California, ISI, US

This paper is a continuation of the work we presented in the 2006 IEEE UGIM Proceedings. Iterative compact device models with quantum mechanical effects for a Double Gate (DG) MOSFET are presented using the Lambert [...]