charge – TechConnect Briefs

Electron instabilities in nanoclusters, nanostructures and inhomogeneous nanomaterials: bottom up approach

Kocharian A., California State University Los Angeles, US

Inhomogeneous nanomaterials with strong local electron correlations are creating a new world-view in condensed matter physics [1-4]. These materials with intrinsic ihomogeneities have electronic and magnetic properties that are widely different from the conventional materials. [...]

Scanning Probe Charge Reading of Ferroelectric Polarization with Nanoscale Resolution

Kim B.M., Adams D.E., Tran Q., Ma Q., Rao V., Nanochip, Inc., US

Probe storage with epitaxial ferroelectric PbZr0.2Ti0.8O3 (PZT) media [1, 2] is a promising technology for terabyte/inch2 storage devices because nanoscale and nonvolatile polarizations may be reversibly written and read by a scanning probe tip. Piezoresponse [...]

Integrated BMS and Analog IC Charge Isolation Architecture in Large Battery Systems

Choi A., Choi C., Baugh B., Radachonski W., Choi A., Choi C., Chan S-W., 1Power Solutions, US

The significance of battery safety and longevity are magnified in large battery system structures, as those present in Battery Electric Vehicles (BEVs), and Underwater Autonomous Vehicles (UAVs), and specialized aerospace, army, and navy battery applications. [...]

Gas Phase Nanoparticle Integration

Barry C.R., Jacobs H.O., University of Minnesota, US

We report on two gas phase nanoparticle integration processes to assemble nanoparticles and other nanomaterials onto desired areas on a substrate. We expect these processes to work with any material that can be charged including [...]

A Compact I-V Model for FinFETs Comprising Multi-Dimensional Electrostatics and Quantum Mechanical Effects

Zhang D., Yu Z., Tian L., Tsinghua University, CN

A compact I-V model for FinFET using ballistic transport with 1D electron gas is presented. The 2D electrostatics and 2D quantum mechanical (QM) effects at the cross-section are fully taken into account, which ensures the [...]

Unified Regional Charge-based MOSFET Model Calibration

See G.H., Chiah S.B., Zhou X., Chandrasekaran K., Shangguan W., Pandey S.M., Cheng M., Chu S., Hsia L.-C., Nanyang Technological University, SG

This paper presents a methodology to extract device physical parameters, i.e., electrical oxide thickness (tox), channel doping (Nch), and poly-gate doping (Ngate), as well as smoothing parameters in our unified regional charge-based model [1] with [...]

Charge Islands Through Tunneling

Robinson D.C., NASA Glenn Research Center, US

It has been recently reported that the electrical charge in a semiconductive carbon nanotube is not evenly distributed, but rather it is divided into charge “islands” [1,2]. This paper links the aforementioned phenomenon to tunneling [...]

Nanotube Tunneling as a Consequence of Probable Discrete Trajectories

Robinson D., NASA Glenn Research Center, US

It has been recently reported that the electrical charge in a semiconductive carbon nanotube is not evenly distributed, but is divided into charge "islands [1,2]." A clear understanding of tunneling phenomena can be useful to [...]