capacitances – TechConnect Briefs

Unified Modeling of Multigate MOSFETs Based on Isomorphic Modeling Principles

Fjeldly T.A., Monga U., Norwegian University of Science and Technology, NO

A compact, unified and analytical model is presented for the 3D electrostatics of nanoscale, multigate MOSFETs. The model is based on solutions of the 3D Laplace equation (subthreshold) and Poisson’s equation (above threshold), where suitable [...]

Compact Subthreshold Modeling of Rectangular Gate and Trigate MOSFETs

Fjeldly T.A., Monga U., Norwegian University of Technology, NO

We have previously shown that the subthreshold potential distribution of DG and circular gate MOSFETs can be precisely modeled using conformal mapping techniques. Simpler, unified models suitable for circuit design can also be established for [...]

Capacitance modeling of Short-Channel DG and GAA MOSFETs

Børli H., Kolberg S., Fjeldly T.A., Norwegian University of Science and Technology, NO

Based on our framework model of the electrostatics and the drain current in short-channel, nanoscale DG and GAA MOSFETs, we here present a corresponding model for the device capacitances covering all regimes of operation from [...]

Characterization of “Multipath Interconnects” for Microelectronic and Nanotechnology Circuits

Goel A.K., Eady N.R., Michigan Technological University, US

A multipath interconnect carries a signal by using the concept of parallel processing by providing two or more paths between the driver and the load. These paths are stacked vertically isolated from one another by [...]