buffer layer – TechConnect Briefs

Analysis of Lag Phenomena and Current Collapse in Field-Plate AlGaN/GaN HEMTs with High-k Passivation Layer

Komoto K., Saito Y., Horio K., Shibaura Institute of Technology, JP

In AlGaN/GaN HEMTs, slow current transients are often observed even if the gate voltage or the drain voltage is changed abruptly. This is called gate lag or drain lag, and problematic in circuits applications. The [...]

Analysis of Breakdown Characteristics in Field-Plate AlGaN/GaN HEMTs: Dependence on Deep-Acceptor Density in Buffer Layer

Akiyama S., Kondo M., Wada L., Horio K., Shibaura Institute of Technology, JP

We make a two-dimensional analysis of field-plate AlGaN/GaN HEMTs with a Fe-doped semi-insulating buffer layer, and studied how the deep-acceptor density in the buffer layer NDA and the field-plate length LFP affect the breakdown voltage [...]

Effect of Deep-Acceptor Density in Buffer Layer on Breakdown Voltage of AlGaN/GaN HEMTs with High-k Passivation Layer

Ueda S., Kawada Y., Horio K., Shibaura Institute of Technology, JP

AlGaN/GaN HEMTs are now receiving great interest for application to high-power microwave devices and high power switching devices. To improve the breakdown voltage, the introduction of field plate is shown to be effective, but it [...]

Effects of Buffer Acceptors on Breakdown Voltages of AlGaN/GaN HEMTs with a High-k Passivation Layer

Kawada Y., Hanawa H., Horio K., Shibaura Institute of Technology, JP

AlGaN/GaN HEMTs are now receiving great interest for application to high-power microwave devices and high-power switching devices. However, the breakdown voltage is known to be greatly lower than that theoretically predicted. To improve the breakdown [...]

Reduction in Lags and Current Collapse in Field-Plate AlGaN/GaN HEMTs with High Acceptor Density in a Buffer Layer

Saito Y., Tsurumaki R., Noda N., Horio K., Shibaura Institute of Technology, JP

We make a two-dimensional transient analysis of field-plate AlGaN/GaN HEMTs with a semi-insulating buffer layer, where a deep acceptor above the midgap is considered. It is studied how the deep-acceptor density and the field plate [...]

Simulation of Lags and Current Collapse in Field-Plate AlGaN/GaN HEMTs with Different Types of Buffer Layers

Tsurumaki R., Noda N., Horio K., Shibaura Institute of Technology, JP

In AlGaN/GaN HEMTs, slow current transients are often observed even if the gate voltage VG or the drain voltage VD is changed abruptly. This is called gate lag or drain lag, and is problematic for [...]