Zhang X. – Page 4 – TechConnect Briefs

First-principles Study of Electron Transport through Atomistic Metal-Oxide-Semiconductor Structures

Zhang X., Fonseca L.R.C., Demkov A.A., Motorola, Inc., US

We describe a theoretical scheme to combine first-principles molecular dynamics simulation and non-perturbative scattering theory for transport calculations. We compare our approach with published results for electron transport through a single Al atom. The method [...]

Methodology for Model Generation with Accuracy from DC to RF

Zhang X., Williams M., Liu Z., Celestry Design Technologies, US

This paper presents an example modeling flow for generating a RF CMOS model. Initially, the objectives of this modeling approach are analyzed. Then issues in test structure design are discussed. In the section of model [...]