Modeling of Short-Channel Effect for Ultra-Thin SOI MOSFET on Ultra-Thin BOX
Miyamoto H., Fukunaga Y., Zenitani H., Kikuchihara K., Mattausch H.J., Miura-Mattausch M., Miura-Mattausch M., Hiroshima University, JP
The SOTB-MOSFET (ultra-thin film SOI layer on ultra-thin BOX) is a candidate for the next MOSFET generations with advanced technology due to its suppression of the short-channel effect. Besides, the thin box layer can well [...]