Yu S. – TechConnect Briefs

On the Variability of HfOx RRAM: From Numerical Simulation to Compact Modeling

Guan X., Yu S., Wong H.S.P., Stanford University, US

The trap-assisted conduction and filamentary switching mechanisms of the HfOx based resistive memory are studied. A numerical simulator is developed to reproduce the experimental I-V curves. Comparison with experiments shows that the cycle-to-cycle variation in [...]

The Failure of the Hydrodynamic Transport Model for Simulation of Partially Depleted SOI MOSFETs and its Revision

Gritsch M., Kosina H., Grasser T., Selberherr S., Linton T., Singh S., Yu S., Giles M.D., TU Vienna, AT

An anomalous output characteristics is observed in hydrodynamic simulations of partially depleted SOI MOSFETs. The effect that the drain current reaches a maximum and then decreases is peculiar to the hydrodynamic transport model. It is [...]