Simulation of Dynamic NBTI Degradation for a 90nm CMOS Technology
Wittmann R., Puchner H., Hinh L., Ceric H., Gehring A., Selberherr S., Vienna University of Technology, AT
The NBTI degradation was systematically investigated for a 90nm p-MOSFET by simulation and experiment. The reaction-diffusion model was extended for NBTI simulations at arbitrary gate voltage, frequency, and duty cycle within a calibrated range. Long-time [...]