Windl W. – TechConnect Briefs

Diffusion Mechanisms and Capture Radii in Silicon

Beardmore K., Windl W., Haley B.P., Gronbech-Jensen N., Motorola, US

We have calculated the capture radii for several defect pairs, consisting of dopants and point defects (interstitials I and vacancies V, in silicon. Interaction potentials for I-V, I-B, P-V, and As-V were calculated using the [...]

Predictive Process Simulation and Ab-initio Calculation of the Physical Volume of Electrons in Silicon

Windl W., Daw M.S., Ohio State University, US

Recently, we have presented the development of a complete predictive simulation capability for the effects of general anisotropic nonuniform stress on dopant diffusion in silicon [M. Laudon, N. N. Carlson, M. P. Masquelier, M. S. [...]

Predictive Process Simulation and Ab-initio Calculation of the Physical Volume of Electrons in Silicon

Windl W., Daw M.S., Ohio State University, US

Recently, we have presented the development of a complete predictive simulation capability for the effects of general anisotropic nonuniform stress on dopant diffusion in silicon [M. Laudon, N. N. Carlson, M. P. Masquelier, M. S. [...]

Diffusion Mechanisms and Capture Radii in Silicon

Beardmore K., Windl W., Haley B.P., Gronbech-Jensen N., Motorola, US

We have calculated the capture radii for several defect pairs, consisting of dopants and point defects (interstitials I and vacancies V, in silicon. Interaction potentials for I-V, I-B, P-V, and As-V were calculated using the [...]

Ab Initio Modeling of Boron Clustering in Silicon

Windl W., Liu X-Y., Masquelier M.P., Motorola, US

We present results of ab initio calculations for the structure and energetic of boron-interstitial clusters in Si and a respective continuum model for the nucleation, growth, and dissolution of such clusters. The structure of the [...]

Theoretical Investigations of Diffusion and Clustering in Semiconductors

Uberuaga B.P., Henkelman G., Jonsson H., Dunham S.T., Windl W., Los Alamos National Lab, US

Density functional theory studies of two systems have been conducted: mechanisms of self-diffusion in Ge and clustering of B in Si. In the case of self-diffusion of Ge, we find for the vacancy mechanism within [...]

Effect of Stress on Dopant Diffusion in Si

Daw M.S., Windl W., Laudon M., Clemson University, US

We present a theoretical treatment of the effect of stress on dopant and defect diffusion in Si. A prior treatment [P.H. Dederichs and K. Schroeder, Phys. Rev. B 17, 2524 (1978)] of vacancy diffusion in [...]

Multiscale Modeling of Stress-Mediated Diffusion in Silicon, Ab Initio to Continuum

Windl W., Laudon M., Daw M.S., Carlson N.N., Masquelier M.P., Motorola, Inc., US

The introduction of new ‘back end’ materials, as well as the further scaling of silicon device dimensions, has raised the level of stress in dvice structures. Current engineering simulations of diffusion neglect the direct effect [...]

Ab-Initio Pseudopotential Calculations of Boron Diffusion in Silicon

Windl W., Stumpf R., Masquelier M., Bunea M., Dunham S.T., Motorola, US

First-principle calculations of formation and migration energies of dopant atoms and native defects in semiconductors are a very useful input to improve semiconductor process simulations One example of this is the widely accepted first-principles model [...]