Whitfield J. – TechConnect Briefs

Compact Modeling and Circuit Impact of a Novel Frequency Dependence of Capacitance in RF MOSFETs

Sudhama C., Joardar K., Whitfield J., Zlotnicka A., Motorola SPS, US

The exploration and modeling of high-frequency MOSFET phenomena are vitally important because MOSFETs are emerging as candidates for active devices in front-end RF circuits operating at more than 1GHz [1-2]. In this work we present [...]

Modeling and Characterization of an Integrated FET Accelerometer

Kniffin M.L., Wiegele T.G., Masquelier M.P., Fu H., Whitfield J., Motorola, Inc., US

The GFET accelerometer is an integrated inertial sensor based on a movable-gate field effect transistor. The complexity of the transduction principle and the tight tolerances associated with its manufacture necessitated a large range of simulation [...]

1/f Noise Characterization of a Surface-Micromachined Suspended Gate FET

Fu H., Kniffin M.L., Watanabe G., Masquelier M.P., Whitfield J., Motorola, Inc., US

This paper presents the first detailed characterization and modeling of 1/f noise in a depletion mode surface-micromachined suspended gate nMOSFET. The results are compared and contrasted with the 1/f noise characteristics of a standard depletion [...]