Compact Modelling of High-Voltage LDMOS Devices
Aarts A.C.T., van der Hout R., van Langevelde R., van der Hout R., van Langevelde R., Scholten A.J., Willemsen M.B., Klaassen D.B.M., Philips Research Laboratories, NE
In this paper various modelling approaches for Laterally Double-Di used MOS (LDMOS) devices are discussed. Characterisation results for the new compact LDMOS model called MOS Model 20 are presented. Measurements of the dc-current, its conductances [...]