Tyree V. – TechConnect Briefs

Electrostatic Potential Compact Model for Symmetric and Asymmetric Lightly Doped DG-MOSFET Devices

Abebe H., Cumberbatch E., Uno S., Tyree V., USC/ISI, US

The analytical symmetric and asymmetric lightly doped DG-MOSFET device electrostatic potential compact model presented here improves the compact model accuracy without any iteration. The model is developed using the Lambert Function and a 2-dimensional (2-D) [...]

SPICE BSIM3 Model Parameters Extraction and Optimization for Low Temperature Application

Abebe H., Tyree V., Cockerham N.S., USC/ISI MOSIS, US

The SPICE BSIM3v3.1 model parameters extraction and optimization strategy that we present here is applicable for a half micron technology and circuits operating at temperature ranging from -191 to 125 0C. The room temperature extraction [...]

Compact Models for Double Gate MOSFET with Quantum Mechanical Effects using Lambert Function

Abebe H., Morris H., Cumberbatch E., Tyree V., University of Southern California, ISI, US

This paper is a continuation of the work we presented in the 2006 IEEE UGIM Proceedings. Iterative compact device models with quantum mechanical effects for a Double Gate (DG) MOSFET are presented using the Lambert [...]

Density Gradient Quantum Surface Potential

Morris H., Cumberbatch E., Yong D., Abebe H., Tyree V., Claremont Graduate University, US

The PSP model, a generalized Surface-Potential (SP) model, has been chosen to be an industry standard for the next generation, 60nm, technology. A major drawback of such SP-models is that the surface potential is given [...]

Analytical Models for Quantized Sub-Band Energy Levels and Inversion Charge Centroid of MOS Structures Derived from Asymptotic and WKB Approximations

Abebe H., Cumberbatch E., Morris H., Tyree V., USC/ISI, US

Quantum effects on MOS structures investigation.

MOSFET Analytical Inversion Charge Model with Quantum Effects using a Triangular Potential Well Approximation

Abebe H., Cumberbatch E.C., Tyree V., Morris H.C., USC/ISI MOSIS, US

The eigenfunctions from solutions of the Schrödinger equation for a triangular potential well are the Airy functions. The triangular potential approximation has been shown to be a good approximation for the charge density when the [...]

Analytical Surface Potential Model with Polysilicon Gate Depletion Effect for NMOS

Cumberbatch E., Abebe H., Morris H., Tyree V., USC/ISI MOSIS, US

Different modeling approaches for the sub-100nm MOSFET are discussed in [1] and the surface potential description model is reported to be promising, [1, 2]. Surface potential changes impact gate capacitance and current-voltage (I-V) characteristics of [...]