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HomeAuthorsSipahi L.B.

Authors: Sipahi L.B.

An Investigation on Modeling and Statistical Simulation of Si-Ge Heterojunction Bipolar Transistors for Characterizing Their Dependence on Germanium Content

Sipahi L.B., Sanders T.J., Florida Institute of Technology, US
Although silicon is by far the most widely utilized manufactured semiconductor material, it is very poor in terms of mobilities of holes and electrons, which give rise to unacceptable low operation speeds. Far higher charge-carrier [...]

Modeling, Simulation and Comparative Analysis of RF Bipolar and MOS Low Noise Amplifiers for Determining Their Performance Dependence on Silicon Processing

Sipahi L.B., Sanders T.J., Florida Institute of Technology, US
In this study, an investigation into MOS (metal-oxide semiconductor) and bipolar LNAs (Low Noise Amplifiers) in terms of their circuit design and the electrical circuit parameters was conducted. As partially reported [1], we have been [...]

A Method for Determining the Dependence of Integrated Circuit Performance on Silicon Process, Device and Circuit Parameters

Sipahi L.B., Myers B.A., Sanders T.J., Intersil Corporation, US
The goal of this project is to develop a structured methodology for achieving a design of a block of circuit in an IC which is more compliant to the specification using a multiple simulation approach. [...]

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