Sanquer M. – TechConnect Briefs

Multi-Tunnel-Junction Memory : Analyses of Feasibility for Non-Volatile Memory Applications

Le Carval G., Le Royer C., Le Carval G., Le Royer C., Sanquer M., CEA-LETI, FR

MOSFET Memories based on quantum dots have been investigated extensively because of their promising applications to non-volatile and low voltage memories. Among these memories, the Multi-Tunnel-Junction Memory (MTJM) appears to be a promising concept for [...]

Modeling and Simulation of Single-Electron Multi Tunnel Junction Memory

Le Carval G., Le Royer C., Le Carval G., Le Royer C., Sanquer M., Fraboulet D., CEA-LET, FR

For optimization of Quantum-Dot-based Multi Tunnel Junction Memory (MTJM) [1], we propose an original compact model validated by physical simulations. We analyze the impact of physical and technological parameters (Temperature, dots density, geometries…) on writing [...]

Modeling and Simulation of Single-Electron Multi Tunnel Junction Memory

Le Carval G., Le Royer C., Le Carval G., Le Royer C., Sanquer M., Fraboulet D., CEA-LET, FR

For optimization of Quantum-Dot-based Multi Tunnel Junction Memory (MTJM) [1], we propose an original compact model validated by physical simulations. We analyze the impact of physical and technological parameters (Temperature, dots density, geometries…) on writing [...]