Unified Approach to Bulk/SOI/UTB/s-DG MOSFET Compact Modeling
Zhou X., Chandrasekaran K., Chiah S.B., Shangguan W., Zhu Z., See G.H., Mani Pandey S., Lim G.H., Rustagi S., Cheng M., Chu S., Hsia L.-C., Nanyang Technological University, SG
In this paper, we extend our unified regional approach to bulk-MOS charge modeling with non-pinned surface potential for various device structures such as PD/FD/UTB SOI and s-DG MOSFETs, including strained-Si channel. The regional solutions make [...]