Ranuárez J.C. – TechConnect Briefs

The Effects of the Gate Tunneling Current on the High Frequency Noise Parameters of MOSFETs

Deen J., Ranuárez J.C., Chen C-H, McMaster University, CA

The impact of the gate tunneling current (GTC) on the noise performance of MOSFETs with very thin gate oxides is studied by developing analytical expressions for the four parameters that describe the noise performance of [...]